Blankmask and photomask for extreme ultraviolet lithography

A blankmask for extreme ultraviolet lithography includes a reflection film, a capping film, and an absorbing film that are sequentially formed on a transparent substrate, in which the reflection film has a surface roughness of 0.5 nm Ra or less. It is possible to prevent footing of an EUV photomask...

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Bibliographische Detailangaben
Hauptverfasser: Yang, Chul-Kyu, Seo, Gyeong-Won, Shin, Cheol, Kong, Gil-Woo, Lee, Jong-Hwa
Format: Patent
Sprache:eng
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Zusammenfassung:A blankmask for extreme ultraviolet lithography includes a reflection film, a capping film, and an absorbing film that are sequentially formed on a transparent substrate, in which the reflection film has a surface roughness of 0.5 nm Ra or less. It is possible to prevent footing of an EUV photomask pattern from occurring, improving flatness of an EUV blankmask, and prevent oxidation and defects of a capping film.