Three-dimensional array architecture for resistive change element arrays and methods for making same

A method to fabricate a resistive change element array may include depositing a resistive change material over a substrate and forming a first insulating material over the resistive change material. The method may also include etching a trench in the resistive change material and the first insulatin...

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Bibliographische Detailangaben
Hauptverfasser: Rueckes, Thomas, Luan, Harry Shengwen
Format: Patent
Sprache:eng
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Zusammenfassung:A method to fabricate a resistive change element array may include depositing a resistive change material over a substrate and forming a first insulating material over the resistive change material. The method may also include etching a trench in the resistive change material and the first insulating material and forming a cavity in a sidewall of the trench by recessing the resistive change material. The method may further include flowing a conductive material in the cavity and depositing a second insulating material in the trench.