Switch device, storage apparatus, and memory system incorporating boron and carbon

A switch device according to an embodiment of the present disclosure includes a first electrode; a second electrode opposed to the first electrode; and a switch layer including selenium (Se), at least one kind of germanium (Ge) or silicon (Si), boron (B), carbon (C), (Ga), and arsenic (As), and prov...

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Bibliographische Detailangaben
Hauptverfasser: Ohba, Kazuhiro, Sei, Hiroaki, Yasuda, Shuichiro
Format: Patent
Sprache:eng
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Zusammenfassung:A switch device according to an embodiment of the present disclosure includes a first electrode; a second electrode opposed to the first electrode; and a switch layer including selenium (Se), at least one kind of germanium (Ge) or silicon (Si), boron (B), carbon (C), (Ga), and arsenic (As), and provided between the first electrode and the second electrode.