Metal triamine compound, method for preparing the same, and composition for depositing metal-containing thin film including the same

Metal triamine compound, method for preparing the same, and composition for depositing metal-containing thin film including the same

Provided are a novel metal triamine compound, a method for preparing the same, a composition for depositing a metal-containing thin film including the same, and a method for preparing a metal-containing thin film using the same. The metal triamine compound of the present invention has excellent reac...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Park, Joong Jin, Lim, Heang Don, Yim, Sang Jun, Park, Jeong Hyeon, Kim, Myong Woon, Chae, Won Mook, Lee, Kang Yong, Cho, A Ra, Lee, Sang Ick
Format: Patent
Sprache:eng
Schlagworte:
ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
ORGANIC CHEMISTRY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Provided are a novel metal triamine compound, a method for preparing the same, a composition for depositing a metal-containing thin film including the same, and a method for preparing a metal-containing thin film using the same. The metal triamine compound of the present invention has excellent reactivity, is thermally stable, has high volatility, and has high storage stability, and thus, it may be used as a metal-containing precursor to easily prepare a high-purity metal-containing thin film having high density.