Garnet compound, oxide sintered compact, oxide semiconductor thin film, thin film transistor, electronic device and image sensor

A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below,0.80≤In/(In+Y+Ga)≤0.96 (1),0.02≤Y/(In+Y+Ga)≤0.10 (2), and0.02≤Ga/(In+Y+Ga)≤0.10 (3), andAl element at an atomic ratio as defined in a formula (4) below,0.005≤Al/(In+...

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Bibliographische Detailangaben
Hauptverfasser:	Kawashima, Emi, Tomai, Shigekazu, Inoue, Kazuyoshi, Tsuruma, Yuki, Shibata, Masatoshi
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SEMICONDUCTOR DEVICES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below,0.80≤In/(In+Y+Ga)≤0.96 (1),0.02≤Y/(In+Y+Ga)≤0.10 (2), and0.02≤Ga/(In+Y+Ga)≤0.10 (3), andAl element at an atomic ratio as defined in a formula (4) below,0.005≤Al/(In+Y+Ga+Al)≤0.07 (4),where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.