Pixel for time-of-flight applications

A time-of-flight (TOF) pixel includes a semiconductor material and a photogate disposed proximate to a frontside of the semiconductor material. The photogate is positioned to transfer charge in the semiconductor material toward the frontside in response to a voltage applied to the photogate. A float...

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Bibliographische Detailangaben
1. Verfasser:	Webster, Eric A. G
Format:	Patent
Sprache:	eng
Schlagworte:	ANALOGOUS ARRANGEMENTS USING OTHER WAVES DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION ORRERADIATION OF RADIO WAVES MEASURING PHYSICS RADIO DIRECTION-FINDING RADIO NAVIGATION TESTING
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Beschreibung
Zusammenfassung:	A time-of-flight (TOF) pixel includes a semiconductor material and a photogate disposed proximate to a frontside of the semiconductor material. The photogate is positioned to transfer charge in the semiconductor material toward the frontside in response to a voltage applied to the photogate. A floating diffusion is disposed in the semiconductor material proximate to the frontside of the semiconductor material, and one or more virtual phase implants is disposed in the semiconductor material proximate to the frontside of the semiconductor material. At least one of the one or more virtual phase implants extend laterally from under the photogate to the floating diffusion to transfer the charge to the floating diffusion.