Method of manufacturing semiconductor device, substrate processing apparatus, method of processing substrate, and recording medium

There is included (a) supplying a gas containing an organic ligand to a substrate; (b) supplying a metal-containing gas to the substrate; and (c) supplying a first reducing gas to the substrate, wherein after (a), a metal-containing film is formed on the substrate by performing (b) and (c) one or mo...

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Bibliographische Detailangaben
Hauptverfasser:	Seino, Atsuro, Ogawa, Arito
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	There is included (a) supplying a gas containing an organic ligand to a substrate; (b) supplying a metal-containing gas to the substrate; and (c) supplying a first reducing gas to the substrate, wherein after (a), a metal-containing film is formed on the substrate by performing (b) and (c) one or more times, respectively.