Semiconductor wafer of monocrystalline silicon and method of producing the semiconductor wafer

Semiconductor wafer of monocrystalline silicon and method of producing the semiconductor wafer

Epitaxially coated semiconductor wafers of monocrystalline silicon comprise a p+-doped substrate wafer and a p-doped epitaxial layer of monocrystalline silicon which covers an upper side face of the substrate wafer;an oxygen concentration of the substrate wafer of not less than 5.3×1017 atoms/cm3 an...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Vollkopf, Alexander, Sattler, Andreas, Mangelberger, Karl
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:Epitaxially coated semiconductor wafers of monocrystalline silicon comprise a p+-doped substrate wafer and a p-doped epitaxial layer of monocrystalline silicon which covers an upper side face of the substrate wafer;an oxygen concentration of the substrate wafer of not less than 5.3×1017 atoms/cm3 and not more than 6.0×1017 atoms/cm3;a resistivity of the substrate wafer of not less than 5 mΩcm and not more than 10 mΩcm; andthe potential of the substrate wafer to form BMDs as a result of a heat treatment of the epitaxially coated semiconductor wafer, where a high density of BMDs has a maximum close to the surface of the substrate wafer.