Selective area growth with improved selectivity for nanowires

A nanowire structure includes a substrate, a patterned mask layer, and a nanowire. The patterned mask layer includes an opening through which the substrate is exposed. Further, the patterned mask layer has a thermal conductivity greater than2⁢0⁢Wm*K.The nanowire is on the substrate in the opening of...

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Bibliographische Detailangaben
Hauptverfasser:	Gronin, Sergei V, Kallaher, Raymond L, Gardner, Geoffrey C
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	A nanowire structure includes a substrate, a patterned mask layer, and a nanowire. The patterned mask layer includes an opening through which the substrate is exposed. Further, the patterned mask layer has a thermal conductivity greater than2⁢0⁢WmK.The nanowire is on the substrate in the opening of the patterned mask layer. By providing the patterned mask layer with a thermal conductivity greater than2⁢0⁢WmK,the patterned mask layer is able to maintain a temperature of the surface thereof to a desired level when the nanowire is provided. This prevents undesired parasitic growth on the patterned mask layer, thereby improving the performance of the nanowire structure.