RRAM memory cell and process to increase RRAM material area in an RRAM memory cell

A memory cell is disclosed. The memory cell includes a word line contact, a cylindrical electrode having a top region and a bottom region, and RRAM material covering the surface of the cylindrical electrode from the top region to the bottom region. A select transistor contact is coupled to the botto...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Majhi, Prashant, Doyle, Brian, Pillarisetty, Ravi, Karpov, Elijah, Sharma, Ashishek
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!