RRAM memory cell and process to increase RRAM material area in an RRAM memory cell

RRAM memory cell and process to increase RRAM material area in an RRAM memory cell

A memory cell is disclosed. The memory cell includes a word line contact, a cylindrical electrode having a top region and a bottom region, and RRAM material covering the surface of the cylindrical electrode from the top region to the bottom region. A select transistor contact is coupled to the botto...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Majhi, Prashant, Doyle, Brian, Pillarisetty, Ravi, Karpov, Elijah, Sharma, Ashishek
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A memory cell is disclosed. The memory cell includes a word line contact, a cylindrical electrode having a top region and a bottom region, and RRAM material covering the surface of the cylindrical electrode from the top region to the bottom region. A select transistor contact is coupled to the bottom region of the cylindrical electrode.