Conductive cap-based approaches for conductive via fabrication and structures resulting therefrom

Conductive cap-based approaches for conductive via fabrication is described. In an example, an integrated circuit structure includes a plurality of conductive lines in an ILD layer above a substrate. Each of the conductive lines is recessed relative to an uppermost surface of the ILD layer. A plural...

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Bibliographische Detailangaben
Hauptverfasser: Tsang, Chi-Hwa, Gstrein, Florian, Han, Eungnak, Hourani, Rami, Nyhus, Paul A, Chandhok, Manish, Wallace, Charles H, Brain, Ruth A
Format: Patent
Sprache:eng
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Zusammenfassung:Conductive cap-based approaches for conductive via fabrication is described. In an example, an integrated circuit structure includes a plurality of conductive lines in an ILD layer above a substrate. Each of the conductive lines is recessed relative to an uppermost surface of the ILD layer. A plurality of conductive caps is on corresponding ones of the plurality of conductive lines, in recess regions above each of the plurality of conductive lines. A hardmask layer is on the plurality of conductive caps and on the uppermost surface of the ILD layer. The hardmask layer includes a first hardmask component on and aligned with the plurality of conductive caps, and a second hardmask component on an aligned with regions of the uppermost surface of the ILD layer. A conductive via is in an opening in the hardmask layer and on a conductive cap of one of the plurality of conductive lines.