Semiconductor device with through-substrate via and its method of manufacture

A dielectric layer is arranged on a main surface of a semiconductor substrate, a metal layer providing a contact area is embedded in the dielectric layer, a top metal is arranged on an opposite main surface of the substrate, and an electrically conductive interconnection through the substrate, which...

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Bibliographische Detailangaben
Hauptverfasser: Parteder, Georg, Sidorov, Victor, Jessenig, Stefan
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A dielectric layer is arranged on a main surface of a semiconductor substrate, a metal layer providing a contact area is embedded in the dielectric layer, a top metal is arranged on an opposite main surface of the substrate, and an electrically conductive interconnection through the substrate, which comprises a plurality of metallizations arranged in a plurality of via holes, connects the contact area with the top metal. The plurality of metallizations is surrounded by an insulating layer penetrating the substrate.