Etching method and substrate processing apparatus

Etching method and substrate processing apparatus

There is provision of an etching method including a step of preparing a substrate over which a boron film or a boron-containing film is formed, a step of supplying a process gas containing chlorine gas, fluorine-containing gas, and hydrogen-containing gas, and a step of etching the boron film or the...

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Hauptverfasser: Ohori, Takahiro, Miura, Taiki, Ogasawara, Masahiro
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Ohori, Takahiro
Miura, Taiki
Ogasawara, Masahiro
description There is provision of an etching method including a step of preparing a substrate over which a boron film or a boron-containing film is formed, a step of supplying a process gas containing chlorine gas, fluorine-containing gas, and hydrogen-containing gas, and a step of etching the boron film or the boron-containing film via a mask using a plasma formed from the process gas.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Etching method and substrate processing apparatus
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