Etching method and substrate processing apparatus

Etching method and substrate processing apparatus

There is provision of an etching method including a step of preparing a substrate over which a boron film or a boron-containing film is formed, a step of supplying a process gas containing chlorine gas, fluorine-containing gas, and hydrogen-containing gas, and a step of etching the boron film or the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Ohori, Takahiro, Miura, Taiki, Ogasawara, Masahiro
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:There is provision of an etching method including a step of preparing a substrate over which a boron film or a boron-containing film is formed, a step of supplying a process gas containing chlorine gas, fluorine-containing gas, and hydrogen-containing gas, and a step of etching the boron film or the boron-containing film via a mask using a plasma formed from the process gas.