Resistive memory elements having conductive islands embedded within the switching layer

Resistive memory elements having conductive islands embedded within the switching layer

Structures for a resistive memory element and methods of forming a structure for a resistive memory element. The resistive memory element includes a first switching layer, a second switching layer, a conductive spacer, a first electrode, and a second electrode. The first switching layer includes a p...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Toh, Eng Huat, Tan, Shyue Seng, Loy, Desmond Jia Jun
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Structures for a resistive memory element and methods of forming a structure for a resistive memory element. The resistive memory element includes a first switching layer, a second switching layer, a conductive spacer, a first electrode, and a second electrode. The first switching layer includes a portion positioned between the first electrode and the conductive spacer, the second switching layer includes a portion positioned between the second electrode and the conductive spacer, and the conductive spacer is positioned between the portion of the first switching layer and the portion of the second switching layer.