Cross-line structure and manufacturing method therefor

A method for manufacturing a cross-line structure includes the steps of etching to obtain a first conductive layer, depositing a second conductive material and a photoresist material on the first conductive layer, and removing the part of the photoresist material on a position where a second conduct...

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Bibliographische Detailangaben
1. Verfasser:	Huang, Shishuai
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	A method for manufacturing a cross-line structure includes the steps of etching to obtain a first conductive layer, depositing a second conductive material and a photoresist material on the first conductive layer, and removing the part of the photoresist material on a position where a second conductive layer is not required by means of a photomask. The method further includes the steps of etching the second conductive material, obtaining the second conductive layer, and performing compensation on a photomask graphic so that the width of an overlap portion of the second conductive layer with the first conductive layer is greater than or equal to the width of the portion of the second conductive layer that does not overlap the first conductive layer.