Capacitor structures for memory and method of manufacturing the same

A capacitor structure of memory is provided in the present invention, including structures of multiple cylindrical bottom electrode layers with bottoms contacting a substrate and extending vertically and upwardly from the substrate, the cylindrical shape of the bottom electrode layer has a sidewall...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Huang, Kai-Jyun
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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