Multiple memory states device and method of making same

Multiple memory states device and method of making same

A phase-change material based resistive memory contains a resistive layer and two electrical contacts. After fabrication the memory is subjected to thermal treatment which initiates a transition toward a crystalline state favoring in this way the subsequent obtaining of a large number of resistive m...

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Bibliographische Detailangaben
Hauptverfasser: Galca, Aurelian-Catalin, Velea, Alin, Dumitru, Viorel-Georgel, Besleaga Stan, Cristina
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Zusammenfassung:A phase-change material based resistive memory contains a resistive layer and two electrical contacts. After fabrication the memory is subjected to thermal treatment which initiates a transition toward a crystalline state favoring in this way the subsequent obtaining of a large number of resistive memory states.