Method and related structure to authenticate integrated circuit with authentication film

The disclosure provides a method to authenticate an integrated circuit (IC) structure. The method may include forming a first authentication film (AF) material within the IC structure. A composition of the first AF material is different from an adjacent material within the IC structure. The method i...

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Bibliographische Detailangaben
Hauptverfasser:	Jain, Vibhor, Adusumilli, Siva P, Ngu, Yves T, Ellis-Monaghan, John J, Kantarovsky, Johnatan A, Singh, Sunil K, Ventrone, Sebastian T
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The disclosure provides a method to authenticate an integrated circuit (IC) structure. The method may include forming a first authentication film (AF) material within the IC structure. A composition of the first AF material is different from an adjacent material within the IC structure. The method includes converting the first AF material into a void within the IC structure. Additionally, the method includes creating an authentication map of the IC structure to include a location of the void in the IC structure for authentication of the IC structure.