Semiconductor laser

Provided is a semiconductor laser including: a core layer having an active layer and a diffraction grating layer optically coupled to the active layer; and paired clad layers arranged sandwiching the core layer, and formed with a waveguide along the core layer, and the semiconductor laser includes:...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Shibuya, Kyoji, Terakado, Tomoji, Matsuhama, Makoto
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:Provided is a semiconductor laser including: a core layer having an active layer and a diffraction grating layer optically coupled to the active layer; and paired clad layers arranged sandwiching the core layer, and formed with a waveguide along the core layer, and the semiconductor laser includes: a flat layer provided continuously with the diffraction grating layer along the waveguide; and a temperature control mechanism for controlling the temperature of the flat layer to a temperature different from that of the diffraction grating layer.