Memory arrays
A memory array comprises vertically-alternating tiers of insulative material and memory cells. The memory cells individually comprise a transistor and a capacitor. One of (a) a channel region of the transistor, or (b) a pair of electrodes of the capacitor, is directly above the other of (a) and (b)....
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A memory array comprises vertically-alternating tiers of insulative material and memory cells. The memory cells individually comprise a transistor and a capacitor. One of (a) a channel region of the transistor, or (b) a pair of electrodes of the capacitor, is directly above the other of (a) and (b). Additional embodiments and aspects are disclosed. |
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