Capacitively coupled plasma etching apparatus

Disclosed is a capacitively coupled plasma etching apparatus, wherein a lower electrode is fixed to a lower end of an electrically conductive supporting rod, a telescope electrically conductive part is fixed to the lower end of the electrically conductive supporting rod, wherein the retractable electrically conductive part being telescoped along an axial direction of the electrically conductive supporting rod; besides, the lower end of the retractable electrically conductive part is electrically connected with the output end of the radio-frequency matcher via an electrically connection portion. In this way, the height of the lower electrode may be controlled through telescoping of the retractable electrically conductive part, such that the spacing between the upper and lower pads becomes adjustable. Besides, an inner electrically conductive ring is further provided at the outer side of the lower electrode; the inner electrically conductive ring is electrically connected with the chamber body via the retractable electrically conductive part; shielding is formed between the inner electrically conductive ring, the lower electrode, and a radio frequency return path in the cavity, avoiding instability of the radio frequency loop caused by the lower electrode radio frequency field during the movement process, thereby achieving stability of the radio-frequency loop while achieving adjustability of the inter-pad spacing.