Plasma treatment method to improve photo resist roughness and remove photo resist scum

A patterned photo resist layer (for example an EUV photo resist layer), which may exhibit line width roughness (LWR) and line edge roughness (LER) or scum is treated with a plasma treatment before subsequent etching processes. The plasma treatment reduces LWR, LER, and/or photo resist scum. In one e...

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Bibliographische Detailangaben
Hauptverfasser:	Park, Wan Jae, Ko, Akiteru
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A patterned photo resist layer (for example an EUV photo resist layer), which may exhibit line width roughness (LWR) and line edge roughness (LER) or scum is treated with a plasma treatment before subsequent etching processes. The plasma treatment reduces LWR, LER, and/or photo resist scum. In one exemplary embodiment, the plasma treatment may include a plasma formed using a gas having a boron and halogen compound. In one embodiment, the gas compound may be a boron and chlorine compound, for example boron trichloride (BCl3) gas. In another embodiment, the gas compound may be a boron and fluorine compound, for example BxFy gases. The plasma treatment process may modify the photoresist surface to improve LWR, LER, and scum effects by removing roughness from the photo resist surface and removing photo resist residues which may case scumming.