Stacked wafer processing method

A stacked wafer processing method for processing one wafer of a stacked wafer having at least two layers laminated, includes a sheet laying step of laying a thermocompression bonding sheet on an upper face of the one wafer, a thermocompression bonding step of thermocompression-bonding the thermocomp...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	Yodo, Yoshiaki, Watanabe, Koji, Zhao, Jinyan, Harada, Shigenori
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINE TOOLS MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	A stacked wafer processing method for processing one wafer of a stacked wafer having at least two layers laminated, includes a sheet laying step of laying a thermocompression bonding sheet on an upper face of the one wafer, a thermocompression bonding step of thermocompression-bonding the thermocompression bonding sheet to an outer peripheral portion of the one wafer where a chamfered portion is formed, a modified layer forming step of irradiating the stacked wafer with a laser beam having a transmission wavelength to the thermocompression bonding sheet and the one wafer from the thermocompression bonding sheet side with a focal point of the laser beam positioned inside the outer peripheral portion of the one wafer, thereby continuously forming a modified layer inside the one wafer, and a chamfered portion removing step of expanding the thermocompression bonding sheet to break the chamfered portion, thereby removing the chamfered portion from the one wafer.