Integrated circuits having cross-couple constructs and semiconductor devices including integrated circuits

An integrated circuit may include a first active region and a second active region, and the first and second active regions may extend on a substrate in a first horizontal direction in parallel to each other and have different conductivity types from each other. A first gate line may extend in a sec...

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Bibliographische Detailangaben
Hauptverfasser: Lim, Jin-Young, Lee, Dal-Hee, Jung, Jong-Hoon, Song, Tae-Joong, Do, Jung-Ho
Format: Patent
Sprache:eng
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Zusammenfassung:An integrated circuit may include a first active region and a second active region, and the first and second active regions may extend on a substrate in a first horizontal direction in parallel to each other and have different conductivity types from each other. A first gate line may extend in a second horizontal direction crossing the first horizontal direction, and may form a first transistor with the first active region. The first transistor may include a gate to which a first input signal is applied. The first gate line may include a first partial gate line that overlaps the first active region in a perpendicular direction and that has an end on a region between the first and second active regions.