Transistor with extended drain region
A transistor device having a channel region including a portion located in a sidewall of semiconductor material of a trench and an extended drain region including a portion located in a lower portion of the semiconductor material of the trench. In one embodiment, a control terminal of the transistor...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A transistor device having a channel region including a portion located in a sidewall of semiconductor material of a trench and an extended drain region including a portion located in a lower portion of the semiconductor material of the trench. In one embodiment, a control terminal of the transistor device is formed by patterning a layer of control terminal material to form a sidewall in the trench and a field plate for the transistor device is formed by forming a conductive sidewall spacer structure along the sidewall of the control terminal material. |
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