Semiconductor device

A plurality of unit transistors that are connected in parallel to each other are formed on a substrate. In addition, a ground bump is provided on the substrate. A plurality of first capacitors are each provided for a corresponding one of the plurality of unit transistors and each connect an output e...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Obu, Isao, Tsutsui, Takayuki
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A plurality of unit transistors that are connected in parallel to each other are formed on a substrate. In addition, a ground bump is provided on the substrate. A plurality of first capacitors are each provided for a corresponding one of the plurality of unit transistors and each connect an output electrode of the corresponding one of the plurality of unit transistors and the ground bump to each other.