Method of patterning a metal film with improved sidewall roughness

Method of patterning a metal film with improved sidewall roughness

In accordance with an embodiment, a method of plasma processing includes etching a refractory metal by flowing oxygen into a plasma processing chamber, intermittently flowing a passivation gas into the plasma processing chamber, and supplying power to sustain a plasma in the plasma processing chambe...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Joy, Nicholas, Raley, Angelique
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In accordance with an embodiment, a method of plasma processing includes etching a refractory metal by flowing oxygen into a plasma processing chamber, intermittently flowing a passivation gas into the plasma processing chamber, and supplying power to sustain a plasma in the plasma processing chamber.