Method for preparing a TEM sample

Method for preparing a TEM sample

The present application discloses a method for preparing a TEM sample, including the following steps: step 1: providing a thin-film pre-sample with undesirable voids; step 2: performing a first cutting with a first FIB to form the TEM sample located in the target region of the thin-film pre-sample....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Qiu, Yanrong, Gao, Jinde, Chen, Qiang
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
TESTING
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Beschreibung
Zusammenfassung:The present application discloses a method for preparing a TEM sample, including the following steps: step 1: providing a thin-film pre-sample with undesirable voids; step 2: performing a first cutting with a first FIB to form the TEM sample located in the target region of the thin-film pre-sample. The first thickness is reached after the first cutting. The voids are exposed from the front surface or the back surface of the TEM sample after the first cutting; step 3: depositing a first material layer by an ALD process to fill the voids in the TEM sample; step 4: performing the second cutting with a second FIB to form the target thickness of the TEM sample in the target region of the thin-film pre-sample. The present application can reduce or eliminate ion beam cutting marks related to the voids in the thin-film pre-sample.