Inspection method for multilayer semiconductor device

An inspection method for a multilayer semiconductor device is provided. The inspection method can investigate multilayered ensembles of a multilayer semiconductor device and obtain stratigraphic thickness (ST) maps of each layer in the multilayer semiconductor device by utilizing absorption edges of...

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Bibliographische Detailangaben
Hauptverfasser:	Wei, Tzu-Chien, Pylnev, Mikhail, Le, Duc-Anh
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	An inspection method for a multilayer semiconductor device is provided. The inspection method can investigate multilayered ensembles of a multilayer semiconductor device and obtain stratigraphic thickness (ST) maps of each layer in the multilayer semiconductor device by utilizing absorption edges of materials of interests and obtaining calibration quality curves.