Quad-layer high-k for metal-insulator-metal capacitors
A semiconductor structure, and a method of making the same includes a multiple electrode stacked capacitor containing a sequence of first metal layers interleaved with second metal layers. A quad-layer stack separates each of the first metal layers from each of the second metal layers, the quad-laye...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A semiconductor structure, and a method of making the same includes a multiple electrode stacked capacitor containing a sequence of first metal layers interleaved with second metal layers. A quad-layer stack separates each of the first metal layers from each of the second metal layers, the quad-layer dielectric stack includes a first dielectric layer made of Al2O3, a second dielectric layer made of HfO2, a third dielectric layer made of Al2O3, and a fourth dielectric layer made of HfO2. |
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