Non-volatile memory elements with a narrowed electrode

Structures for a non-volatile memory element and methods of forming a structure for a non-volatile memory element. A switching layer is positioned over a first electrode, and a dielectric layer is positioned over the switching layer. The dielectric layer includes an opening extending to the switchin...

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Bibliographische Detailangaben
Hauptverfasser: Toh, Eng Huat, Hsieh, Curtis Chun-I, Leong, Lup San, Tang, Kin Wai, Tan, Juan Boon
Format: Patent
Sprache:eng
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Zusammenfassung:Structures for a non-volatile memory element and methods of forming a structure for a non-volatile memory element. A switching layer is positioned over a first electrode, and a dielectric layer is positioned over the switching layer. The dielectric layer includes an opening extending to the switching layer. A second electrode includes a portion in the opening in the dielectric layer. The portion of the second electrode is in contact with a first portion of the switching layer. The switching layer further includes a second portion positioned between the dielectric layer and the first electrode.