Power semiconductor device and method

A power semiconductor device includes: a semiconductor body having a front side surface and a drift region having first conductivity type dopants; and an edge termination region that includes a part of the drift region and a first semiconductor region extending along the front side surface. The firs...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Pfirsch, Frank Dieter
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!