Power semiconductor device and method

A power semiconductor device includes: a semiconductor body having a front side surface and a drift region having first conductivity type dopants; and an edge termination region that includes a part of the drift region and a first semiconductor region extending along the front side surface. The first semiconductor region includes dopants of both conductivity types and forms a continuous pn-junction with the drift region. An integrated vertical dopant concentration of the second conductivity type dopants is higher than an integrated vertical dopant concentration of the first conductivity type dopants within the first semiconductor region. A first dose profile representing a vertically integrated net dopant concentration of the both conductivity type dopants in the first doped semiconductor region has a smaller degree of waviness along a horizontal direction than a second dose profile representing a vertically integrated dopant concentration of the second conductivity type dopants in the same semiconductor region.