Capacitor structure

A capacitor structure including a semiconductor substrate; a dielectric layer on the semiconductor substrate; a storage node pad in the dielectric layer; a lower electrode including a bottle-shaped bottom portion recessed into the dielectric layer and being in direct contact with the storage node pa...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	Lee, Fu-Che, Chang, Feng-Yi, Zhan, Yi-Wang, Chen, Chieh-Te
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A capacitor structure including a semiconductor substrate; a dielectric layer on the semiconductor substrate; a storage node pad in the dielectric layer; a lower electrode including a bottle-shaped bottom portion recessed into the dielectric layer and being in direct contact with the storage node pad; and a lattice layer supporting a topmost part of the lower electrode, wherein the lattice layer is not directly contacting the dielectric layer, but is directly contacting the topmost part of the lower electrode. The bottle-shaped bottom portion extends to a sidewall of the storage node pad. The bottle-shaped bottom portion has a width that is wider than other portion of the lower electrode.