Semiconductor device and semiconductor circuit

A semiconductor device of one embodiment including: a semiconductor layer with first and second planes, first and second trenches, a third trench beside the first trench, a fourth trench beside the second trench, and first to fourth semiconductor regions; first to fourth gate electrodes in the first...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Iwakaji, Yoko, Matsudai, Tomoko
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor device of one embodiment including: a semiconductor layer with first and second planes, first and second trenches, a third trench beside the first trench, a fourth trench beside the second trench, and first to fourth semiconductor regions; first to fourth gate electrodes in the first to fourth trenches, respectively; a first electrode on the first plane, a first contact area with the semiconductor layer between the first trench and the third trench being larger than a second contact area with the semiconductor layer between the third trench and the fourth trench, a third contact area with the semiconductor layer between the second trench and the fourth trench being larger than the second contact area; a second electrode on the second plane; a first gate electrode pad connected to the first and second gate electrodes; and a second gate electrode pad connected to the third and fourth gate electrodes.