Semiconductor structure

A semiconductor structure includes a substrate, a gate region, a source/drain region, a composite layer, an ILD layer, a first plug and a second plug. The composite layer includes a first sublayer and a third layer including a first material, and a second sublayer including a second material. The se...

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Bibliographische Detailangaben
Hauptverfasser:	Jeng, Chi-Cherng, Hsiao, Ru-Shang, Huang, Chih-Mu
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A semiconductor structure includes a substrate, a gate region, a source/drain region, a composite layer, an ILD layer, a first plug and a second plug. The composite layer includes a first sublayer and a third layer including a first material, and a second sublayer including a second material. The second sublayer is between the first sublayer and the third sublayer. The first plug is through the ILD layer and electrically connected to the gate region. The second plug is through the ILD layer and the composite layer and electrically connected to the source/drain region. The second plug includes a first portion laterally adjoining the first sublayer, a second portion laterally adjoining the second sublayer, and a third portion laterally adjoining the third sublayer. Widths of the first portion and the third portion are smaller than a width of the second portion. The second portion has a substantially curved sidewall profile.