Nanowires or nanopyramids grown on a graphene substrate

A composition of matter comprising: a graphitic substrate optionally carried on a support, a seed layer having a thickness of no more than 50 nm deposited directly on top of said substrate, opposite any support; and an oxide or nitride masking layer e directly on top of said seed layer; wherein a pl...

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Hauptverfasser: Høiaas, Ida Marie E, Heimdal, Carl Philip J, Fimland, Bjørn Ove M, Weman, Helge, Kim, Dong Chul
Format: Patent
Sprache:eng
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Zusammenfassung:A composition of matter comprising: a graphitic substrate optionally carried on a support, a seed layer having a thickness of no more than 50 nm deposited directly on top of said substrate, opposite any support; and an oxide or nitride masking layer e directly on top of said seed layer; wherein a plurality of holes are present through said seed layer and through said masking layer to C said graphitic substrate; and wherein a plurality of nanowires or nanopyramids are grown from said substrate in said holes, said nanowres or nanopyramids comprising at least one semiconducting group III-V compound.