Semiconductor device including dummy gate patterns and manufacturing method thereof

Semiconductor device including dummy gate patterns and manufacturing method thereof

A semiconductor device may include: a dummy gate structure including a first gate pattern in which dummy gate lines extending in one direction are connected to each other on a substrate, and a second gate pattern in which dummy gate lines extending in the one direction are connected to each other on...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Park, Sejin, Park, Juyun, Baek, Jonghoon, Jeong, Sooyeon, Kim, Donghyun, Shin, Taeyeon, Song, Inhyun, Jeon, Yeongmin
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device may include: a dummy gate structure including a first gate pattern in which dummy gate lines extending in one direction are connected to each other on a substrate, and a second gate pattern in which dummy gate lines extending in the one direction are connected to each other on the same line with the first gate pattern; and a third gate pattern extending in parallel with the dummy gate structure on one side of the dummy gate structure.