Memory device and operation method thereof

An operation method of a memory device may include performing a program operation on a memory block in response to a program command from a controller, and applying a program voltage to a dummy word line coupled to dummy cells within the memory block such that the dummy cells have an indication thre...

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Bibliographische Detailangaben
1. Verfasser: Kim, Younggyun
Format: Patent
Sprache:eng
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Zusammenfassung:An operation method of a memory device may include performing a program operation on a memory block in response to a program command from a controller, and applying a program voltage to a dummy word line coupled to dummy cells within the memory block such that the dummy cells have an indication threshold voltage higher than a normal pass voltage and providing a program fail signal to the controller when the program operation fails.