Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems

A method of forming a microelectronic device comprises forming a conductive shielding material over a conductive shielding structure and a first dielectric structure horizontally adjacent the conductive shielding structure. A second dielectric structure is formed on first dielectric structure and horizontally adjacent the conductive shielding material. The conductive shielding material and the second dielectric structure are patterned to form fin structures extending in parallel in a first horizontal direction. Each of the fin structures comprises two dielectric end structures integral with remaining portions of the second dielectric structure, and an additional conductive shielding structure interposed between the two dielectric end structures in the first horizontal direction. Conductive lines are formed to extend in parallel in the first horizontal direction and to horizontally alternate with the fin structures in a second horizontal direction orthogonal to the first horizontal direction. Microelectronic devices, memory devices, and electronic systems are also described.