Memory devices and methods of manufacture thereof

Representative methods of manufacturing memory devices include forming a transistor with a gate disposed over a workpiece, and forming an erase gate with a tip portion extending towards the workpiece. The transistor includes a source region and a drain region disposed in the workpiece proximate the...

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Bibliographische Detailangaben
Hauptverfasser: Tuan, Hsiao-Chin, Tsui, Felix Ying-Kit, Lu, Hau-Yan, Kalnitsky, Alexander
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Representative methods of manufacturing memory devices include forming a transistor with a gate disposed over a workpiece, and forming an erase gate with a tip portion extending towards the workpiece. The transistor includes a source region and a drain region disposed in the workpiece proximate the gate. The erase gate is coupled to the gate of the transistor.