Nonvolatile memory device

A nonvolatile memory device includes a peripheral circuit region and a memory cell region. The peripheral circuit region includes a block selecting circuit, a block unselecting circuit, and a first metal pad. The memory cell region is vertically connected to the peripheral circuit region, and includes a first memory block and a second metal pad directly connected to the first metal pad. The block selecting circuit is connected with ground selection lines, word lines, and string selection lines, and provides corresponding driving voltages to the ground selection lines, the word lines, and the string selection lines in response to a block selection signal corresponding to the first memory block, respectively. The block unselecting circuit is connected only with specific string selection lines, and provides an off-voltage only to the specific string selection lines in response to a block un-selection signal.