SiC epitaxial wafer, semiconductor device, and power converter

SiC epitaxial wafer, semiconductor device, and power converter

A SiC epitaxial wafer includes a SiC substrate and a SiC epitaxial layer disposed on the SiC substrate. The SiC epitaxial layer includes a high carrier concentration layer and two low carrier concentration layers having lower carrier concentration than the high carrier concentration layer, and being...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Sakai, Masashi, Mitani, Yoichiro
Format: Patent
Sprache:eng
Schlagworte:
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS
BASIC ELECTRIC ELEMENTS
CONTROL OR REGULATION THEREOF
CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERATION
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A SiC epitaxial wafer includes a SiC substrate and a SiC epitaxial layer disposed on the SiC substrate. The SiC epitaxial layer includes a high carrier concentration layer and two low carrier concentration layers having lower carrier concentration than the high carrier concentration layer, and being in contact with a top surface and a bottom surface of the high carrier concentration layer to sandwich the high carrier concentration layer. A difference in carrier concentration between the high carrier concentration layer and the low carrier concentration layers is 5×1014/cm3 or more and 2×1016/cm3 or less.