Electrostatic chuck for clamping in high temperature semiconductor processing and method of making same

An electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C to 750 C. The top surface may be sapphire. The top surface is attached to the lower portion of the electrostatic chuck using a braze layer able to withstand corrosive processing chemistrie...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Balma, Frank, Stephens, Jason, Elliot, Brent Donald Alfred, Parker, Michael, Hussen, Guleid
Format: Patent
Sprache:eng
Schlagworte:
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