Electrostatic chuck for clamping in high temperature semiconductor processing and method of making same

An electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C to 750 C. The top surface may be sapphire. The top surface is attached to the lower portion of the electrostatic chuck using a braze layer able to withstand corrosive processing chemistrie...

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Bibliographische Detailangaben
Hauptverfasser:	Balma, Frank, Stephens, Jason, Elliot, Brent Donald Alfred, Parker, Michael, Hussen, Guleid
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMISTRY CLADDING OR PLATING BY SOLDERING OR WELDING COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOTDIRECTED TO A PARTICULAR RESULT COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE CORONA DEVICES CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g.ARRANGEMENTS FOR COPYING OR CONTROLLING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES LIME, MAGNESIA MACHINE TOOLS MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OFPARTICULAR DETAILS OR COMPONENTS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY OVERVOLTAGE ARRESTERS USING SPARK GAPS PERFORMING OPERATIONS REFRACTORIES SEMICONDUCTOR DEVICES SLAG SOLDERING OR UNSOLDERING SPARK GAPS SPARKING PLUGS TRANSPORTING TREATMENT OF NATURAL STONE WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	An electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C to 750 C. The top surface may be sapphire. The top surface is attached to the lower portion of the electrostatic chuck using a braze layer able to withstand corrosive processing chemistries. A method of manufacturing an electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C to 750 C.