Bond pad structure with reduced step height and increased electrical isolation

Various embodiments of the present disclosure are directed towards a semiconductor structure including a bond pad disposed within a semiconductor substrate. The semiconductor substrate has a back-side surface and a front-side surface opposite the back-side surface. An upper surface of the semiconduc...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Chou, Shih-Pei, Lu, Jiech-Fun
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Various embodiments of the present disclosure are directed towards a semiconductor structure including a bond pad disposed within a semiconductor substrate. The semiconductor substrate has a back-side surface and a front-side surface opposite the back-side surface. An upper surface of the semiconductor substrate is vertically below the back-side surface. The bond pad extends through the semiconductor substrate. The bond pad includes a conductive body over the upper surface of the semiconductor substrate and conductive protrusions extending from above the upper surface to below the front-side surface of the semiconductor substrate. A vertical distance between a top surface of the bond pad and the back-side surface of the semiconductor substrate is less than a height of the conductive protrusions. A first bond pad isolation structure extends through the semiconductor substrate and laterally surrounds the conductive protrusions.