Composition for resist underlayer film formation, resist underlayer film and method for forming the same, and production method of a patterned substrate

A composition for resist underlayer film formation contains: a first compound including at least one oxazine structure fused to an aromatic ring; and a solvent. The first compound preferably includes a partial structure represented by formula (1). In formula (1), R2 to R5 each independently represen...

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Bibliographische Detailangaben
Hauptverfasser: Miura, Ichihiro, Takanashi, Kazunori, Sakai, Kazunori, Nakatsu, Hiroki
Format: Patent
Sprache:eng
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Zusammenfassung:A composition for resist underlayer film formation contains: a first compound including at least one oxazine structure fused to an aromatic ring; and a solvent. The first compound preferably includes a partial structure represented by formula (1). In formula (1), R2 to R5 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; Ar1 represents a group obtained by removing (n+3) or (n+2) hydrogen atoms on the aromatic ring from an arene having 6 to 20 carbon atoms; R6 represents a hydroxy group, a halogen atom, a nitro group or a monovalent organic group having 1 to 20 carbon atoms; and n is an integer of 0 to 9.