Semiconductor device

A semiconductor device includes a substrate, a bottom electrode on the substrate, a first support layer on the substrate next to a sidewall of the bottom electrode, a dielectric layer covering the sidewall and a top surface of the bottom electrode, and a top electrode on the dielectric layer. The bo...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Choi, Byoungdeog, Choo, Seongmin, Yi, Ha-Young, Kwon, Hyukwoo
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	Choi, Byoungdeog Choo, Seongmin Yi, Ha-Young Kwon, Hyukwoo
description	A semiconductor device includes a substrate, a bottom electrode on the substrate, a first support layer on the substrate next to a sidewall of the bottom electrode, a dielectric layer covering the sidewall and a top surface of the bottom electrode, and a top electrode on the dielectric layer. The bottom electrode includes a first part having a plurality of protrusions that protrude from a sidewall of the first part. The first part of the bottom electrode may be on the first support layer.
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11211447B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11211447B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11211447B23</originalsourceid><addsrcrecordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfGhwYaGRoaGJibmTkbGxKgBAGHHIQg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device</title><source>esp@cenet</source><creator>Choi, Byoungdeog ; Choo, Seongmin ; Yi, Ha-Young ; Kwon, Hyukwoo</creator><creatorcontrib>Choi, Byoungdeog ; Choo, Seongmin ; Yi, Ha-Young ; Kwon, Hyukwoo</creatorcontrib><description>A semiconductor device includes a substrate, a bottom electrode on the substrate, a first support layer on the substrate next to a sidewall of the bottom electrode, a dielectric layer covering the sidewall and a top surface of the bottom electrode, and a top electrode on the dielectric layer. The bottom electrode includes a first part having a plurality of protrusions that protrude from a sidewall of the first part. The first part of the bottom electrode may be on the first support layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211228&DB=EPODOC&CC=US&NR=11211447B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211228&DB=EPODOC&CC=US&NR=11211447B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Choi, Byoungdeog</creatorcontrib><creatorcontrib>Choo, Seongmin</creatorcontrib><creatorcontrib>Yi, Ha-Young</creatorcontrib><creatorcontrib>Kwon, Hyukwoo</creatorcontrib><title>Semiconductor device</title><description>A semiconductor device includes a substrate, a bottom electrode on the substrate, a first support layer on the substrate next to a sidewall of the bottom electrode, a dielectric layer covering the sidewall and a top surface of the bottom electrode, and a top electrode on the dielectric layer. The bottom electrode includes a first part having a plurality of protrusions that protrude from a sidewall of the first part. The first part of the bottom electrode may be on the first support layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfGhwYaGRoaGJibmTkbGxKgBAGHHIQg</recordid><startdate>20211228</startdate><enddate>20211228</enddate><creator>Choi, Byoungdeog</creator><creator>Choo, Seongmin</creator><creator>Yi, Ha-Young</creator><creator>Kwon, Hyukwoo</creator><scope>EVB</scope></search><sort><creationdate>20211228</creationdate><title>Semiconductor device</title><author>Choi, Byoungdeog ; Choo, Seongmin ; Yi, Ha-Young ; Kwon, Hyukwoo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11211447B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Choi, Byoungdeog</creatorcontrib><creatorcontrib>Choo, Seongmin</creatorcontrib><creatorcontrib>Yi, Ha-Young</creatorcontrib><creatorcontrib>Kwon, Hyukwoo</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Choi, Byoungdeog</au><au>Choo, Seongmin</au><au>Yi, Ha-Young</au><au>Kwon, Hyukwoo</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device</title><date>2021-12-28</date><risdate>2021</risdate><abstract>A semiconductor device includes a substrate, a bottom electrode on the substrate, a first support layer on the substrate next to a sidewall of the bottom electrode, a dielectric layer covering the sidewall and a top surface of the bottom electrode, and a top electrode on the dielectric layer. The bottom electrode includes a first part having a plurality of protrusions that protrude from a sidewall of the first part. The first part of the bottom electrode may be on the first support layer.</abstract><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng
recordid	cdi_epo_espacenet_US11211447B2
source	esp@cenet
subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Semiconductor device
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T18%3A50%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Choi,%20Byoungdeog&rft.date=2021-12-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11211447B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true